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Special Session 2: Oxide Semiconductor Devices
Introduction and Topics
Oxide semiconductors, such as indium–gallium–zinc oxide (IGZO), are a mature technology in display panels, where they serve as the backbone of high-performance thin-film transistors (TFTs) for organic light-emitting diode (OLED) and high-resolution liquid crystal displays (LCDs). Beyond displays, these wide-bandgap materials have recently attracted significant interest for emerging applications that leverage their unique properties—ultra-low off-state leakage current, back-end-of-line (BEOL) compatibility, and scalability. In particular, oxide semiconductor transistors are now being actively explored as enabling devices for monolithic three-dimensional (3D) integration, allowing active circuitry to be stacked directly above logic circuits. They are also being developed as access transistors for next-generation dynamic random-access memory (DRAM), addressing the critical challenge of leakage current in deeply scaled silicon devices. This session covers frontier research topics in the field of oxide semiconductor transistors, spanning fundamental material development to advanced device applications.
The topics of this session include:
- →Oxide semiconductor materials and processes
- →Oxide semiconductor device modeling and simulation
- →Reliability of oxide semiconductor devices
- →Oxide semiconductor for monolithic 3D integration
- →Oxide semiconductor for DRAM
- →Oxide semiconductors for sensors and displays
Special Session Chairs
Mengwei Si
Shanghai Jiao Tong University | China
Dr. Mengwei Si received his B.S. degree in Electronic Engineering from Shanghai Jiao Tong University, Shanghai, China, in 2012. He received his Ph.D. degree in Electrical and Computer Engineering from Purdue University, West Lafayette, USA, in 2018. Before joining Shanghai Jiao Tong University in 2021, he was a postdoc with Department of Electrical and Computer Engineering at Purdue University. He is currently an associate professor with Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China. His research interests include semiconductor fabrication, semiconductor materials and devices, ferroelectric materials, oxide semiconductors, nanoscale devices and technology and atomic layer deposition. He has published over 100 papers in international journals and conferences.
Sunbin Deng
Huazhong University of Science and Technology | China
Dr. Sunbin Deng received his B.Sc. degree from Huazhong University of Science and Technology (HUST), Wuhan, China, in 2014, and his Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology (HKUST), Hong Kong SAR, in 2020. Subsequently, he held postdoctoral fellow positions at Purdue University (2021–2022) and Georgia Institute of Technology (2022–2025), where he conducted research in collaboration with Prof. Suman Datta and Prof. Shimeng Yu. Dr. Deng is currently a Professor with the School of Optical and Electronic Information at HUST. His research focuses on back-end-of-line (BEOL)-compatible thin-film (opto)electronics, with a particular emphasis on oxide semiconductor transistors, for monolithic 3D integration, electronic–photonic integration, alternative computing, and information display technologies. To date, Dr. Deng has co-authored 80+ publications, including 30+ papers as first or corresponding author, in leading peer-reviewed journals (e.g., Sci. Adv., Nat. Commun., IEEE EDL, and IEEE T-ED) and top-tier international conferences (e.g., IEDM, VLSI). He has received several academic awards, including the Distinguished Paper Award at SID Display Week Symposium and the Young Leader Award from SID.
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