Geliang Yang, received the Ph.D. degree from Southeast University, Nanjing, China, in 2013. In 2014, he joined the 54th Research Institute of China Electronics Technology Group Corporation, where he was engaged in the research and development of microwave and millimeter-wave integrated circuits. He was promoted to a Professor-level Senior Engineer in 2022. In 2024, he joined the School of Integrated Circuits, Guangdong University of Technology, as a Professor. His current research interests include monolithic integrated circuit design and computer vision.

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Kai Li received the B.S. degree and Ph.D. degree from Tianjin University, Tianjin, China, in 2020 and 2026, respectively. His research interests include millimeter-wave frequency multipliers and mixer-first receivers.

Speech Title: High-precision Voltage and Frequency Reference Circuits

Dr. Zhang received the Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, in 2016. From 2016 to 2018, he was a Post-Doctoral Fellow with The Hong Kong University of Science and Technology, Hong Kong. From 2019 to 2020, he was an Assistant Professor with Hiroshima University, Higashi-Hiroshima, Japan. In 2020, he joined the Institute of Semiconductors, Chinese Academy of Sciences, where he is currently a Professor. His research interests include the design of low-jitter and low-power PLLs, energy-efficient optical-electronic wireline transceivers, and ultra-low-voltage ultra-low-power analog ICs. He (co)authored more than 80 conference and journal papers, including ISSCC, VLSI, A-SSCC, JSSC, TCAS-I, TCAS-II, TVLSI and etc.

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Zhuojun Chen (Senior Member, IEEE) received the Ph.D. degree in integrated circuit design from the Institute of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Beijing, China, in 2017. In 2017, he joined Hunan University, Changsha, China, where he was an Assistant Professor at the School of Physics and Electronics. He is currently a Professor with the College of Semiconductors (College of Integrated Circuits), Hunan University. His current research interests include analog/mixed-signal integrated circuit and domain-specific accelerator design. Dr. Chen was a recipient of several design and teaching awards.

Speech Title: High-precision Voltage and Frequency Reference Circuits

Run Min is a professor from Huazhong University of Science and Technology. He is a national youth talent, top youth talent of Hubei Province, Distinguished Scholar of HUST, and Senior Member of IEEE. Focusing on the applications of aerospace and automotive, he devotes himself to the research of high-reliability power driver ICs and high-power-density power supplies. In recent years, he has directed over 3 projects funded by the National Natural Science Foundation of China, 2 KGJ projects, 8 aerospace projects. His developed chips have been mass-produced and applied in satellites and Dongfeng Motor vehicles (Mengshi, eπ, Aeolus), for which he was awarded the "Excellent Chip Contribution Award" by Dongfeng Motor. He has published more than 30 SCI papers, among which 16 papers were published as the first/corresponding author in journals and conferences including IEEE JSSC, CICC, TPEL, TIE, TCAS-I and APEC. He has been granted 10 invention patents. He serves as a senior reviewer for journals such as IEEE TPEL, TIE, JESTPE and TCAS-I, and was awarded the Outstanding Reviewer Award from IEEE TPEL.

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Jian Zhao (S’14, M’17, SM’21) received his Ph.D. degree from the School of Mechanical Engineering, Nanjing University of Science and Technology, China, in 2017. He served as a visiting scholar in the VLSI and Signal Processing Lab at the National University of Singapore from 2012 to 2015. From 2017 to 2019, he joined the Department of Electronic Engineering, Tsinghua University, as a postdoctoral researcher. He is currently an Associate Professor in the School of Integrated Circuits, Shanghai Jiao Tong University, China. His research interests include biomedical and bio-inspired circuits and systems. He has authored and co-authored over 80 technical papers and 2 book chapters. He is the recipient of the IEEE BioCAS 20th Anniversary Top WiCAS/YP Contributor Award, the ISCAS 2024 Best Demonstration Award, and the ICTA 2021 Best Paper Award. He has also served as an Associate Editor for the IEEE Transactions on Biomedical Circuits and Systems (TBioCAS) and IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS-I), he received the TCAS-I Best Associate Editor Award in 2021. He is selected as IEEE CASS distinguished lecturer from 2025.

Speech Title: Towards Flexible Biomedical Systems: Circuits and Design on Thin-film Transistors

Zhong Tang received the B.S. and Ph.D. degrees in electrical engineering from Zhejiang University, Hangzhou, China, in 2015 and 2020, respectively. From 2020 to 2023, he was a Postdoc Researcher with Electronic Instrumentation Lab, Delft University of Technology, Delft, The Netherlands. He joint Vango Technologies Inc., Hangzhou, China as an Analog IC Designer from 2023 to 2025. He is currently a Professor with Hangzhou Institute of Technology, Xidian University, Hangzhou, China. His research interests include precision analog and mixed-signal integrated circuits. This has led to over 50 technical articles, including 10+ papers published in JSSC and ISSCC. Dr. Tang was a recipient of the Outstanding Doctoral Thesis Award of the Chinese Institute of Electronics in 2022, and the Best Speaker Award of Workshop on IC Advances in China (ICAC) 2024.

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Professor Hua Fan, Young Changjiang Scholar of the Ministry of Education, IEEE Senior Member. Now, Hua Fan is the Associate Editor of IEEE TCAS-I and TCAS-II, she is president of IEEE Woman in Engineering (WIE) Chengdu chapter. She received the Ph.D. degree from Tsinghua University, and has been a Professor of University of Electronic Science and Technology of China since July 2021.

Speech Title: Research on Key Technologies of CMOS Three-Axis Hall Sensors
Abstract: Compared with conventional horizontal Hall devices, which can only sense the magnetic field perpendicular to the device surface, three-axis Hall devices can simultaneously detect the magnetic field in the x, y, and z directions at a single point, making them suitable for applications involving magnetic field vector detection. Owing to the advantages of long service life and high reliability brought by non-contact measurement, monolithic three-axis Hall sensors are particularly widely used in angle measurement. They can detect the angular orientation of a magnet rotating around the sensor’s central axis and realize full 360° angle measurement, which is applied in fields such as missile launch angle control, unmanned aerial vehicles, joysticks, robotics, and automotive electronics.
Conventional three-axis Hall sensors employ three horizontal Hall devices aligned along the respective coordinate axes to be measured, while requiring the three independently operating Hall devices to be placed in close physical proximity. This fabrication approach for three-axis sensors is extremely difficult and costly. Horizontal Hall devices can only measure the magnetic field perpendicular to the device surface, whereas vertical Hall devices can measure the magnetic field parallel to the device surface. Therefore, the combination of horizontal and vertical Hall devices provides a feasible solution for the measurement of three-dimensional spatial magnetic fields.

Dr. SangHoon Shin is an experienced semiconductor engineer and researcher specializing in advanced SoC packaging, heterogeneous integration, and semiconductor reliability. With over 8 years of industry and academic experience, he has led key developments at Tesla, Apple, Intel, and IBM, contributing to innovations in AI server, automotive, and consumer electronics. His expertise includes 2.5D/3D IC packaging, CMOS reliability, predictive reliability modeling. Dr. Shin holds a Ph.D. in Electrical and Computer Engineering from Purdue University, has authored 45 publications (18 as first author) including in prestigious conferences like IEDM and IRPS, and holds 2 patents. He currently serves as an Assistant Professor at Hanyang University ERICA, continuing his research in advanced semiconductor packaging and reliability engineering.

Speech Title: TBD

Dr. Han LI received his Ph.D degree from Harvard in 2005, and is currently a Professor in the School of Integrated Circuits at Southeast University, China. Prior to that, he held multiple technical and management positions with IBM Research and Intel TMG. His research interests include chiplet integration technologies, advanced on-chip interconnects and substrate technologies, and novel thermal and mechanical analysis methods. He has published over thirty peer-reviewed journal papers and two book chapters. He received multiple awards for his contributions to Intel’s technology development.

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Mingmin Huang is currently an associate professor in the Department of Microelectronics, School of Physics, Sichuan University. His research focuses on the radiation effects and radiation hardening of power semiconductor devices. He has published more than 70 papers in prestigious journals and international conferences such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, and ISPSD, with over 30 of them as first or corresponding author. He has been granted over 20 invention patents, including 1 U.S. patent and 15 Chinese patents as the first inventor. He has received Best Paper Awards at ASICON 2021, EDSSC 2025, and the 2024 Symposium on Radiation Physics. He serves as a reviewer for IEEE EDL, TED, TNS, and TDMR, and was recognized as an IOP Gold Reviewer in 2024. He also serves as a Technical Program Committee member and session chair for the IEEE ICICM, a TPC member for IEEE ICSICT, and a Youth Editorial Board member of the journal Microelectronics.

Speech Title: TBD

Yawei Chen (Member, IEEE) received his M.S. degree from Zhejiang Sci-Tech University, Hangzhou, China, in 2007. He is currently the Manager of the Yield Enhancement Department at the Manufacturing Center Fab8A, China Resources Microelectronics Ltd., Wuxi, China. He has 19 years of experience encompassing technical R&D and mass production in semiconductor manufacturing at SMIC and CRMicro. He was awarded the associate senior professional title in 2022. He is a member of the expert database of the Professional Title Evaluation Committee at China Resources Group and part of the mentor pool for joint master's and doctoral training programs at CRMicro. Additionally, he serves as a Technical Program Committee (TPC) reviewer for IEEE International Conferences(BTS-I2C,CECNet). He has published nearly 10 SCI/EI-indexed papers in the semiconductor manufacturing field and holds over 50 invention patents, including one U.S. patent. His research focuses on yield enhancement, process integration, machine learning, reinforcement learning, LLMs-based model, APC system and the application of AI-driven technologies in wafer fabrication.

Speech Title: TBD

Jie Wei (Member, IEEE) received his Ph.D. degrees from the University of Electronic Science and Technology of China (UESTC), Chengdu, China in 2018. He is currently a Research Fellow with the School of Integrated Circuit Science and Engineering, UESTC. His research interests include power semiconductor technology and power integrated technology based on materials of Silicon, GaN and Ga2O3. He has been responsible for more than 10 national/provincial-level projects. He has published over 60 academic papers in IEEE EDL/T-ED/ JEDS, SST, CPB etc., and IEEE international conferences like IEEE ISPSD/EDTM/ICSICT. He is the deputy director of the Ministry of Education Engineering Research Center for Advanced Power and Radio Frequency Devices and Integrated Circuits. He served as a reviewer for IEEE TED, IEEE EDL, CPB, and other journals. He had won the “First Prize for Technical Invention from the China Institute of Electronics” in 2025, and "Second Prize of Sichuan Science and Technology Invention Award" in 2020.

Speech Title: TBD

Dr. Wen Yang is an Associate Professor and Doctoral Supervisor at South China University of Technology, and has been recognized as a high-level talent in Guangdong Province. He earned his Ph.D. from the University of Central Florida, USA, and has extensive expertise in the reliability of wide-bandgap semiconductor devices, failure analysis of power semiconductors, and reliability of mixed-signal integrated circuits. With substantial industry experience, Dr. Yang previously worked at Analog Devices, Inc. (ADI), a leading global semiconductor company, where he led failure analysis, process optimization, and yield improvement for mixed-signal integrated circuits. His contributions provided critical technical support for the mass production of multiple process platforms. He has published over 30 papers in top-tier international journals and conferences, including IEEE T-PE, IEEE EDL, APL, IEEE T-ED, and IEEE IRPS. Dr. Yang also served as Chair of the IEEE EDS Orlando Section. Currently, he leads and participates in multiple research projects focused on the reliability of wide-bandgap power semiconductor devices, funded by the National Natural Science Foundation of China, Guangdong Natural Science Foundation, Guangdong Key R&D Program, and Open Fund of State Key Laboratory.

Speech Title: TBD

Xuanze Zhou is an Associate Researcher at the School of Integrated Circuits, University of Science and Technology of China (USTC). His research focuses on ultra-wide bandgap semiconductor gallium oxide materials and power transistors. Over the past five years, he has published 21 SCI papers as first/corresponding author (including 10 papers in mainstream device journals such as IEEE EDL, TED, and TCPMT) and 6 papers at ISPSD, a top international conference in the field of power semiconductors. He has applied for 11 Chinese invention patents and 2 U.S. patents, with 4 patents granted. Several of his research works have been featured by ScienceNet, People's Daily Online, China Education Network, Science and Technology Daily, and the international journal Compound Semiconductor. His research achievements were selected as one of the "Top Ten Advances in China's Third-Generation Semiconductors for 2024."

Speech Title: TBD

Prof. Yang Hong is now working wtih the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS). Before joining IME, she served as a Senior Engineer in Samsung Electronics from 2005 to 2011. Her research focuses on the reliability physics of advanced semiconductor devices and processes, as well the reliability-technology co-optimization. She has authored or co-authored over 50 papers in prestigious journals and conferences such as IEEE Electron Device Letters (EDL), IEEE Transactions on Electron Devices (TED), and the IEEE International Reliability Physics Symposium (IRPS).

Speech Title: TBD

Kemeng Yang received the Ph.D. degree in microelectronics and solid-state electronics from the Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China, in 2020. She worked as a Postdoctoral Fellow with University of Electronic Science and Technology of China from 2020 to 2022, and in 2023, she joined NJUPT as an Associate Professorr. She has published more than 30 high-level papers and obtained 28 granted patents. Her research focuses on the silicon power devices, wide-bandgap power devices, and power integrated circuits.

Speech Title: High-Voltage GaN Power Devices and Modeling Techniques

Dr Xie is currently VP of HMT & CTO of advanced packaging. Dr.Xie received his BS & MS from TsingHua University, China & his PhD degree from University of Colorado at Boulder. He has over 30 years of experience in packaging & held various engineering & management positions at Intel, FCI & TFME. He managed & participated in the development & production of many packaging technology & products in applications in computing, memory, communication & consumer areas. Dr.Xie is a senior member of IEEE. He holds 35 US patents & over 12 Chinese patents. He published over a dozen papers in IEEE & ASME journals.

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Research leader in metrology development and application from a leading 300mm silicon wafer supplier. Eight year experience in application of silicon wafers in various IC products. Ph.D in surface science focused on semiconductor materials. Master and bachelor in condensed matter physics.

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Jiangbin Wu, Ph.D., Professor, and doctoral supervisor. Dr. Wu received his B.S. degree from the Department of Electronic Science and Technology, Huazhong University of Science and Technology, in 2012, and his Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences, in 2017. From 2017 to 2023, he worked as a postdoctoral researcher at the University of Southern California, USA. In 2023, he joined the Institute of Semiconductors, Chinese Academy of Sciences, as a Professor. He has been selected for the National Overseas High-Level Young Talent Program and the Youth High-Level Talent Program of the Chinese Academy of Sciences. Dr. Wu has published more than 90 academic papers. As a first/co-first author or corresponding author, he has published over 20 papers in leading journals and top microelectronics conferences, including Nature, Nature Electronics (2 papers), Nature Communications, Chemical Society Reviews, Advanced Materials (2 papers), ACS Nano (4 papers), Nano Letters (2 papers), and IEDM. His publications have received more than 12,000 citations, with an H-index of 38 according to Google Scholar. He has also filed and been granted multiple patents in China and the United States. He has led four national-level research projects and four provincial or ministerial-level projects, and has participated in several other major research programs. He received the Excellent Doctoral Dissertation Award of the Chinese Academy of Sciences in 2018 and the President’s Award of the Chinese Academy of Sciences (Excellence Award) in 2016. He currently serves as Deputy Director of the National Key Laboratory of Semiconductor Chip Physics and Technology.

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Dr. Lang Zeng is Professor at the School of Integrated Circuit Science and Engineering, Beihang University. He formerly served as the Head of the Department of IC Design and Tools. His research focuses on the modeling and simulation of semiconductor device, spintronic devices and Ferroelectrical Device. He has conducted long-term research on the fundamental theories and key technologies of TCAD simulation tools across multiple dimensions, including physical models, numerical methods, acceleration algorithms, and parallel program development.
He has served as the principal investigator (PI) for multiple projects funded by the National Natural Science Foundation of China (NSFC) and National Key R&D Programs, and has participated in major NSFC projects as well as the Beijing Science and Technology Program. He has published over 90 SCI/EI-indexed papers, holds 7 authorized national patents (with 1 successfully commercialized), and owns 2 authorized software copyrights. Additionally, he has been invited to deliver presentations at major international conferences more than 10 times and has frequently served as a member of program and technical committees for international conferences.

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Xubing Lu received his PhD degree from Nanjing University in 2002. From 2002 to 2010, he worked as postdoctoral researcher, JSPS research fellow and Humbolt researcher in several universities and research institutions in China and abroad. He has been working at South China Normal University as a full professor since 2010. His research interests include high-κ dielectric materials, ferroelectric materials, and their applications in nonvolatile memory devices and neuromorphic computing.

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My research focuses on advanced memory devices and energy-efficient compute-in-memory (CIM) architectures through a cross-layer framework that spans physical modulation, chip design, and hardware-software co-optimization. Over the past five years, I have led initiatives in next-generation non-volatile memory, flexible digital CIM processors, and multimodal sensing-communication systems, with foundational works published in Nature, Nature Communications, Science Advances, and IEDM. The pioneering FLEXI chip delivers a scalable hardware platform for edge intelligence in robotics and wearables, leveraging existing display panel lines for low-cost manufacturing. Backed by over 50 patents, I was selected for the National-Level Young Talent Program (2023) and have twice received the Beijing Science and Technology Award.

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2018 - Present: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University. 2010 - 2017: Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Materials for Integrated Circuits, Chinese Academy of Sciences. 2004-2010: Beijing University of Technology. The main research focus is on new types of storage materials and devices, including new ferroelectrics, phase-change, threshold switching and selector-only memories.

Switching Dynamics in Al1-xScxN Ferroelectrics

Jin Luo is an associate professor in the School of Integrated Circuit Science and Technology at Beihang University, China. He received his B.S. degree from the University of Electronic Science and Technology of China in 2018 and his Ph.D. degree from Peking University in 2023. He subsequently worked as a postdoctoral researcher at Peking University from 2023 to 2026. His research interests include emerging non-volatile memory devices and computing-in-memory architectures for energy-efficient AI hardware. He focuses on hafnium-oxide-based ferroelectric memories and their device-circuit-architecture co-design for intelligent computing systems. In these areas, he has authored more than 30 papers and has an h-index of 10. He has first-authored 5 papers at the IEDM and 1 paper at the VLSI Symposium. Dr. Luo currently leads and participates in several research projects funded by the National Natural Science Foundation of China.

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Bing Chen (S'11-M'14) received the B.S. degree from Sichuan University, Chengdu, China, in 2008, and the Ph.D. degree from the Institute of Microelectronics, Peking University, Beijing, China, in 2014. He is currently a Professor with the Hangzhou Institute of Technology, Xidian University, China. His research interests mainly include emerging memories and computing-in-memory.

Speech Title: Modeling the Polarization Dynamics and Reliability Failure in HfO2-Based Ferroelectrics

Xiuyan Li is a Professor in the School of Integrated Circuit, Shanghai Jiao Tong University. She got her Ph.D degree in Material Engineering from The University of Tokyo, Japan, in 2015. After that, she was a post-doctoral at Rutgers University, USA. Then, she joined Shanghai Jiao Tong University from 2018, was tenured in 2024 and became full Professor in 2025. Her research interests include device physics and materials engineering for advanced MOS and memory technologies. So far, she published more than 50 papers in journals like Nature Communications, IEEE Electron Device Letters and Applied Physics Letters, as well as in conferences like IEDM, EDTM and SSDM.

Speech Title: Thermal and Electrical Filed Induced Phase Transition in Ferroelectric HfxZr1-xO2 Thin Films